This device achieves invisible cutting of sapphire substrate Mini LED backlight wafers, forming microcracks inside the wafer; After subsequent splitting processing, the entire wafer can be split into micrometer sized Mini LED backlight chips, which can be used for Mini LED backlight boards in televisions, displays, and tablets.

Using dual path ultrafast lasers for invisible cutting, cutting with MiniLED backlight and direct display chips, and cutting with LED lighting chips.

This equipment is used for precision cutting of silicon carbide (SiC) materials, which can efficiently achieve low loss and high-precision processing of high hardness SiC substrates. Infrared laser cutting can stably control the edge breakage within 50 μ m, fully matching the high-strength performance requirements of customers for products. It is suitable for high-end manufacturing fields such as third-generation semiconductors, optical communications, power electronics, and new energy vehicles.

For repairing small pixel bright spots such as Mini LED, Micro OLED, silicon-based Micro Oled, femtosecond infrared laser, electrically adjustable slit, conjugate optical path, WDI focus tracking device, AOI image recognition and other technologies are used.

For repairing small pixel defects such as MiniLED and silicon-based Micro OLED, femtosecond infrared laser, electrically adjustable slit, conjugate optical path, WDI focus tracking device, AOI image recognition and other technologies are used.